Semiconductor memory device and method for manufacturing the same

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United States of America Patent

PATENT NO 9018061
APP PUB NO 20150060982A1
SERIAL NO

14153384

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Abstract

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A semiconductor memory device according to an embodiment, includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film including silicon provided on the first insulating film, a second insulating film provided on the silicon film, a hafnium alloy-containing film provided on the second insulating film, the hafnium alloy-containing film including oxygen and an alloy of hafnium and a metal other than hafnium, a third insulating film provided on the hafnium alloy-containing film, and an electrode provided on the third insulating film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itokawa, Hiroshi Oita-ken, JP 46 262

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