Solid-state image sensing device with a change-over switch
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United States of America Patent
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Apr 28, 2015
Grant Date -
Oct 4, 2012
app pub date -
Mar 30, 2012
filing date -
Mar 31, 2011
priority date (Note) -
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Abstract
A solid-state image sensing device comprises a unit pixel containing a photoelectric conversion element for detecting a light to generate photoelectrons and at least one electrode for forming an MOS diode structure, a first contact point connected to a first voltage supply for supplying a first voltage to the electrode, a second contact point connected to a second voltage supply for supplying a second voltage higher than the first voltage to the electrode, a first capacitor disposed between the first and second contact points, a change-over switch connected to one of the first and second contact points to selectively switch a voltage applied to the electrode to the first voltage or the second voltage, and pixel drive circuits for driving the change-over switch, thereby alternately applying the first voltage and the second voltage to the electrode to generate, hold, transfer, reset, or discharge the photoelectrons.
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