Semiconductor device having a plurality of transistors with different crystal face
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United States of America Patent
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Apr 28, 2015
Grant Date -
Feb 6, 2014
app pub date -
Mar 1, 2013
filing date -
Jul 31, 2012
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region.
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