Method of fabricating semiconductor device

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United States of America Patent

PATENT NO 9023718
APP PUB NO 20140141599A1
SERIAL NO

14165857

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Abstract

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A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Hoi-Sung Hwaseong-si, KR 26 257
Do, Jin-Ho Yongin-si, KR 9 43
Joo, Dae-Kwon Osan-si, KR 12 64
Kim, Weon-Hong Suwon-si, KR 64 1125
Lim, Ha-Jin Seoul, KR 37 536
Song, Moon-Kyun Anyang-si, KR 16 98

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