Method for manufacturing a HEMT transistor and corresponding HEMT transistor
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United States of America Patent
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May 5, 2015
Grant Date -
Oct 18, 2012
app pub date -
Apr 6, 2012
filing date -
Apr 15, 2011
priority date (Note) -
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Abstract
A method for manufacturing a HEMT transistor includes: realizing an undoped epitaxial layer on a substrate; realizing a barrier epitaxial layer on the undoped epitaxial layer so as to form a heterojunction; realizing source and drain structures, separated from one other, on the barrier epitaxial layer; depositing an insulating layer on the barrier epitaxial layer and on the source and drain structures; and photolithographic defining the insulating layer, defining first and second insulating portions in correspondence of the source and drain structures, respectively, and exposing a portion of the barrier epitaxial layer. The method further comprises: forming first and second spacers lying at the corners of the first and second insulating portions; and depositing a gate metal structure at least partially covering said first and second insulating portions, and said first and second spacers, said gate metal structure being a field plate of the HEMT transistor.
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