Method for fabricating a planar micro-tube discharger structure

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United States of America Patent

PATENT NO 9024516
APP PUB NO 20140106064A1
SERIAL NO

14109297

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Abstract

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A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.

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Patent Owner(s)

Patent OwnerAddress
AMAZING MICROELECTRONIC CORP18F NO 2 JIAN 8TH RD ZHONGHE DIST NEW TAIPEI CITY 235

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tung-Yang Jhubei, TW 38 516
Jiang, Ryan Hsin-Chin Taipei, TW 46 403
Ker, Ming-Dou Jhu-bei, TW 284 4774

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