Resistance change nonvolatile semiconductor memory device
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United States of America Patent
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May 5, 2015
Grant Date -
Sep 27, 2012
app pub date -
Mar 19, 2012
filing date -
Mar 23, 2011
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Abstract
According to one embodiment, a phase change memory includes a memory cell, a select transistor, and a memory cell array. The memory cell includes a chalcogenide wiring, resistance wirings and a cell transistor. The chalcogenide wiring becomes a heater. One end of a plurality of memory cells with sources and drains connected in series is connected to a source of the select transistor. The bit line is connected a drain of the select transistor. The memory cell array is obtained by forming a memory cell string.
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