Method for fabrication of a semiconductor device and structure
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United States of America Patent
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May 12, 2015
Grant Date -
Apr 18, 2013
app pub date -
Oct 18, 2011
filing date -
Oct 18, 2011
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Abstract
A method for formation of a semiconductor device, the method including: providing a first mono-crystalline layer including first transistors and first alignment marks; providing an interconnection layer including aluminum or copper on top of the first mono-crystalline layer; and then forming a second mono-crystalline layer on top of the first mono-crystalline layer interconnection layer by using a layer transfer step, and then processing second transistors on the second mono-crystalline layer including a step of forming a gate dielectric, where at least one of the second transistors is a p-type transistor and at least one of the second transistors is an n-type transistor.
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