Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
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United States of America Patent
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May 12, 2015
Grant Date -
Mar 6, 2014
app pub date -
Sep 3, 2013
filing date -
Sep 5, 2012
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Abstract
According to one embodiment, a manufacturing method of a semiconductor device includes forming a crystal film on a semiconductor substrate by irradiating the semiconductor substrate with a first microwave, obtained by providing frequency modulation or phase modulation of a first carrier wave which is a sine wave with a first frequency, using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than a first frequency, and irradiating the semiconductor substrate with a second microwave, obtained by providing frequency modulation or phase modulation of a second carrier wave, which is a sine wave with a second frequency higher than the first frequency, using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.
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