Through silicon via metallization

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9029258
APP PUB NO 20140217590A1
SERIAL NO

13759938

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Abstract

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To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kolics, Artur Dublin, US 74 1312
Nalla, Praveen Reddy Fremont, US 2 12
Tjokro, Novy Sastrawati San Ramon, US 1 8
Varadarajan, Seshasayee Lake Oswego, US 52 2431

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