Semiconductor device manufacturing method
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United States of America Patent
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May 12, 2015
Grant Date -
Jul 17, 2014
app pub date -
Aug 21, 2013
filing date -
Jan 11, 2013
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide or silicon nitride on the silicon film, forming a physical guide having a depressed portion above the insulating film, forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide, phase-separating the directed self-assembly material layer into a first region which includes the first polymer and a second region which includes the second polymer, removing the second region, processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film. Further, the silicon film is processed by using the pattern transferred onto the insulating film as a mask.
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