Non-volatile memory device and method for manufacturing same
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United States of America Patent
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May 12, 2015
Grant Date -
Mar 13, 2014
app pub date -
Sep 5, 2013
filing date -
Sep 11, 2012
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Abstract
According to an embodiment, a non-volatile memory device includes a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film provided between the semiconductor layer and the charge storage layer. The device also includes a first conductive layer provided on the charge storage layer, a second conductive layer provided between the charge storage layer and the first conductive layer, a second insulating film provided between the charge storage layer and the second conductive layer, and a third insulating film provided between the first conductive layer and the second conductive layer.
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