Nonvolatile semiconductor memory device including floating gate electrodes formed between control gate electrodes and vertically formed along a semiconductor pillar
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United States of America Patent
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May 12, 2015
Grant Date -
Aug 29, 2013
app pub date -
Apr 17, 2013
filing date -
Jan 22, 2009
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.
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