Semiconductor memory device and method of manufacturing the same

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United States of America Patent

PATENT NO 9029943
APP PUB NO 20140001525A1
SERIAL NO

13781050

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Abstract

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The semiconductor memory device includes a cell transistor having a gate insulating film deposited on an inner surface of a groove formed in an upper surface of the semiconductor substrate, a gate electrode buried in the groove with the gate insulating film formed on the inner surface thereof, and a source region and a drain region formed on an upper surface of the active area of the semiconductor substrate on opposite sides of the gate electrode. The semiconductor memory device includes an MTJ element having a variable resistance that varies with a direction of magnetization that is provided on the source region and electrically connected to the source region at a first end thereof.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kajiyama, Takeshi Yokohama, JP 80 1660

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