Semiconductor devices with heterojunction barrier regions and methods of fabricating same
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United States of America
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May 12, 2015
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Mar 8, 2010
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Mar 8, 2010
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Abstract
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.
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