Solid-state image sensor with light-guiding portion
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United States of America Patent
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May 12, 2015
Grant Date -
Nov 28, 2013
app pub date -
May 16, 2013
filing date -
May 25, 2012
priority date (Note) -
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Abstract
A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.
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