Semiconductor device and structure
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United States of America Patent
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May 12, 2015
Grant Date -
Apr 4, 2013
app pub date -
Sep 23, 2012
filing date -
Oct 2, 2011
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Abstract
A semiconductor device, including: a first semiconductor layer including first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; and a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein the at least one metal layer is in-between the first semiconductor layer and the second mono-crystallized semiconductor layer, wherein the second mono-crystallized semiconductor layer is less than 100 nm in thickness, and wherein the second transistors include horizontally oriented transistors.
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