Three dimensional non-volatile storage with dual layers of select devices
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United States of America Patent
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May 12, 2015
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Dec 12, 2011
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Dec 14, 2010
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Abstract
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.
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