Adjusting program and erase voltages in a memory device

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United States of America Patent

PATENT NO 9030874
APP PUB NO 20140119121A1
SERIAL NO

14150568

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Abstract

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A system and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. One such method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. Such a method might also include applying a third voltage level to non-edge word lines of the memory block string.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Zhudong Town, TW 291 8125

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