Isolating, at least in part, local row or column circuitry of memory cell before establishing voltage differential to permit reading of cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 12, 2015
Grant Date -
Jan 16, 2014
app pub date -
Jun 6, 2012
filing date -
Jun 6, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An embodiment may include local row and column circuitry that are local to a memory cell of a memory device. Either the local row circuitry or the local column circuitry may be electrically isolated, at least in part, from at least one remaining portion of the memory device during the establishing of a voltage differential between the local row circuitry and the local column circuitry that is to permit the memory cell to be read during a read of the memory cell. The read may occur subsequent to the establishing of the voltage differential. Many variations, modifications, and alternatives are possible without departing from this embodiment.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully