Halo region formation by epitaxial growth
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United States of America Patent
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May 19, 2015
Grant Date -
Dec 4, 2014
app pub date -
May 31, 2013
filing date -
May 31, 2013
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Abstract
A semiconductor device and method for manufacturing the same, wherein the method includes fabrication of field effect transistors (FET). The method includes growing a doped epitaxial halo region in a plurality of sigma-shaped source and drain recesses within a semiconductor substrate. An epitaxial stressor material is grown within the sigma-shaped source and drain recesses surrounded by the doped epitaxial halo forming source and drain regions with controlled current depletion towards the channel region to improve device performance. Selective growth of epitaxial regions allows for control of dopants profile and hence tailored and enhanced carrier mobility within the device.
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