Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same

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United States of America Patent

PATENT NO 9035412
APP PUB NO 20150014804A1
SERIAL NO

14280808

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Abstract

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The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.

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Patent Owner(s)

Patent OwnerAddress
OSI OPTOELECTRONICS INC12525 CHADRON AVENUE HAWTHORNE CA 90250

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Cerritos, US 47 1033
Taneja, Narayan Dass Long Beach, US 47 1042

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