Programmed-state detection in memristor stacks
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United States of America Patent
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May 19, 2015
Grant Date -
Dec 26, 2013
app pub date -
Jun 26, 2012
filing date -
Jun 26, 2012
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Abstract
A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary switching response in a memristor in the memristor stack. The programmed-state-dependent secondary switching response results in a detectable change in the electrical resistance of the memristor stack. The method also includes measuring a first electrical resistance of the memristor stack and inferring the programmed state of the memristor stack from the measured electrical resistance.
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