Magneto-resistive memory device including source line voltage generator

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United States of America Patent

PATENT NO 9036406
APP PUB NO 20130329489A1
SERIAL NO

13832101

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Abstract

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A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Sang-Kyu Anyang-si, KR 14 423
Kim, Dong-Min Seoul, KR 79 502
Kim, Hye-Jin Seoul, KR 109 1475
Lee, Kyu-Chan Seoul, KR 39 451
Sohn, Dong-Hyun Hwaseong-si, KR 22 415

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