Dopant host
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United States of America Patent
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May 26, 2015
Grant Date -
May 22, 2014
app pub date -
Jan 24, 2014
filing date -
Nov 9, 2007
priority date (Note) -
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Abstract
A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.
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