Non-volatile storage system using opposite polarity programming signals for MIM memory cell
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United States of America Patent
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Jun 2, 2015
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Jul 17, 2014
app pub date -
Mar 17, 2014
filing date -
Mar 2, 2011
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Abstract
A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.
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