Semiconductor device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 9, 2015
Grant Date -
Oct 20, 2011
app pub date -
Apr 14, 2011
filing date -
Apr 15, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully