Local tailoring of fingers in multi-finger fin field effect transistors
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United States of America Patent
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Jun 9, 2015
Grant Date -
May 22, 2014
app pub date -
Nov 16, 2012
filing date -
Nov 16, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
A cluster of semiconductor fins is formed on an insulator layer. A masking material layer is formed over the array of semiconductor fins such that spaces between adjacent semiconductor fins are filled with the masking material layer. A photoresist layer is applied over the masking material layer, and is lithographically patterned. The masking material layer is etched to physically expose a sidewall surface of a portion of an outermost semiconductor fin in regions not covered by the photoresist layer. A recessed region is formed in the insulator layer such that an edge of the recessed region is formed within an area from which a portion of the semiconductor fin is removed. The photoresist layer and the masking material layer are removed. Within the cluster, a region is provided that has a lesser number of semiconductor fins than another region in which semiconductor fins are not etched.
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