Semiconductor device with copper wirebond sites and methods of making same
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United States of America Patent
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Jun 9, 2015
Grant Date -
Feb 27, 2014
app pub date -
Oct 29, 2013
filing date -
Sep 27, 2007
priority date (Note) -
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Abstract
Semiconductor devices with external wirebond sites that include copper and methods for fabricating such semiconductor devices are disclosed. One embodiment of a method for fabricating a semiconductor device comprises forming a dielectric layer on an active side of a semiconductor substrate. The dielectric layer has openings aligned with corresponding wirebond sites at the active side of the substrate. The method further includes forming a plurality of wirebond sites located at the openings in the dielectric layer. The wirebond sites are electrically coupled to an integrated circuit in the semiconductor substrate and electrically isolated from each other. Individual wirebond sites are formed by electrolessly depositing nickel into the openings and forming a wirebond film on the nickel without forming a seam between the nickel and the dielectric layer.
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