Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same
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United States of America Patent
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Jun 9, 2015
Grant Date -
Feb 12, 2015
app pub date -
Aug 7, 2013
filing date -
Aug 7, 2013
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Abstract
A method for manufacturing a fin field-effect transistor (FinFET) device comprises forming a plurality of fins on a substrate, epitaxially growing a sacrificial epitaxy region between the fins, stopping growth of the sacrificial epitaxy region at a beginning of merging of epitaxial shapes between neighboring fins, and forming a dielectric layer on the substrate including the fins and the sacrificial epitaxy region, wherein a portion of the dielectric layer is positioned between the sacrificial epitaxy region extending from fins of adjacent transistors.
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