Interdigitated back contact silicon solar cells fabrication using diffusion barriers

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United States of America Patent

PATENT NO 9054237
APP PUB NO 20110070676A1
SERIAL NO

12954299

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Abstract

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Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

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Patent Owner(s)

  • PALO ALTO RESEARCH CENTER INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakayashiki, Kenta Sandvika, NO 17 155
Xu, Baomin San Jose, US 33 681

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