Structure, system and method for device radio frequency (RF) reliability
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United States of America Patent
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Jun 9, 2015
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app pub date -
Jul 19, 2013
filing date -
Jul 19, 2013
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Abstract
Disclosed are test structures for radio frequency (RF) power stress and characterization. Each test structure incorporates a single device and is selectively operated in either a stress mode, during which the device is stressed under RF power, or in an analysis mode, during which the impact of the applied stress on the performance of the device is characterized. During the stress mode, an input RF power signal is applied to the device through an RF signal input port and an output RF power signal is captured from the device at an RF signal output port. Depending upon the impedance value of the device at issue, the RF signal input port and the RF signal output port are connected to either the same terminal or opposing terminals and the need for impedance tuning is avoided. Also disclosed are test systems and methods for selectively controlling operation of such a test structure.
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