Methods for modeling of FinFET width quantization
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United States of America Patent
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Jun 16, 2015
Grant Date -
Oct 16, 2014
app pub date -
Jun 27, 2014
filing date -
Jan 15, 2013
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Abstract
A method for modeling FinFET width quantization is described. The method includes fitting a FinFET model of a FinFET device to single fin current/voltage characteristics. The FinFET device comprises a plurality of fins. The method includes obtaining statistical data of at least one sample FinFET device. The statistical data includes DIBL data and SS data. The method also includes fitting the FinFET model to a variation in a current to turn off the finFETs device (IOFF) in the statistical data using the DIBL data and the SS data and determining a model for a voltage to turn off the finFETs device (VOFF). The method also includes fitting the FinFET model to the VOFF.
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