Resistive memory sensing

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United States of America Patent

PATENT NO 9058875
APP PUB NO 20140169066A1
SERIAL NO

13921951

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bi, Lei Sichuan, CN 37 201
Calderoni, Alessandro Boise, US 35 237
Johnson, Adam D Meridian, US 17 283
Keeth, Brent Boise, US 344 10323
Ramaswamy, D V Nirmal Boise, US 91 654
Sandhu, Gurtej S Boise, US 1216 32355
Sills, Scott E Boise, US 205 1176

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