MOSFET with recessed channel film and abrupt junctions
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United States of America Patent
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Jun 16, 2015
Grant Date -
Feb 13, 2014
app pub date -
Oct 22, 2013
filing date -
Apr 14, 2011
priority date (Note) -
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Abstract
MOSFETs and methods for making MOSFETs with a recessed channel and abrupt junctions are disclosed. The method includes creating source and drain extensions while a dummy gate is in place. The source/drain extensions create a diffuse junction with the silicon substrate. The method continues by removing the dummy gate and etching a recess in the silicon substrate. The recess intersects at least a portion of the source and drain junction. Then a channel is formed by growing a silicon film to at least partially fill the recess. The channel has sharp junctions with the source and drains, while the unetched silicon remaining below the channel has diffuse junctions with the source and drain. Thus, a MOSFET with two junction regions, sharp and diffuse, in the same transistor can be created.
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