Method for controlled removal of a semiconductor device layer from a base substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 16, 2015
Grant Date -
Jan 3, 2013
app pub date -
Sep 5, 2012
filing date -
Jun 15, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully