Process for selectively removing nitride from substrates
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United States of America Patent
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Jun 16, 2015
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Jun 14, 2012
app pub date -
Dec 6, 2011
filing date -
Dec 10, 2010
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Abstract
A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.
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