Etch with pulsed bias

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United States of America Patent

PATENT NO 9059116
APP PUB NO 20130084708A1
SERIAL NO

13252813

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Abstract

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A method for etching features into an etch layer through a patterned mask in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a main etch plasma. A bias greater than 600 volts is provided. The bias is pulsed at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Qian Pleasanton, US 66 932
Jain, Amit Mountain View, US 247 2351
Lee, Wonchul San Ramon, US 34 252

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