High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jul 10, 2014
app pub date -
Jan 10, 2013
filing date -
Jan 10, 2013
priority date (Note) -
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Abstract
Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. Control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.
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