T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator
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United States of America Patent
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Jun 16, 2015
Grant Date -
Dec 18, 2014
app pub date -
Jun 13, 2013
filing date -
Jun 13, 2013
priority date (Note) -
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Abstract
A base region extends upward from a recessed semiconductor surface of a semiconductor material portion present on an insulator. The base region includes a vertical stack of, an extrinsic base region and an intrinsic base region. The extrinsic base region includes a first compound semiconductor material portion of a first conductivity type and a first dopant concentration. The intrinsic base region includes another first compound semiconductor material portion of the first conductivity type and a second dopant concentration which is less than the first dopant concentration. A collector region including a second compound semiconductor material portion of a second conductivity type opposite of the first conductivity type is located on one side on the base region. An emitter region including another second compound semiconductor material portion of the second conductivity type is located on another side on the base region.
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