Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion
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United States of America Patent
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Jun 16, 2015
Grant Date -
Apr 16, 2015
app pub date -
Oct 15, 2013
filing date -
Oct 15, 2013
priority date (Note) -
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Abstract
A method is disclosed for forming a semiconductor device. A first opening is formed for an STI on a semiconductor substrate and a first process is performed to deposit first oxide into the first opening. A second opening is formed to remove a portion of the first oxide from the first opening and second process(es) is/are performed to deposit second oxide into the second opening and over a remaining portion of the first oxide. A portion of the semiconductor device is formed over a portion of a surface of the second oxide. A semiconductor device includes an STI including a first oxide formed in a lower portion of a trench of the STI and a second oxide formed in an upper portion of the trench and above the first oxide. The semiconductor device includes a portion of the semiconductor device formed over a portion of the second oxide.
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