Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jan 3, 2013
app pub date -
Sep 1, 2012
filing date -
Nov 16, 2009
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Abstract
An interconnect structure is provided which includes at least one patterned and cured low-k material located directly on a surface of a substrate; and at least one least one conductively filled region embedded within an interconnect pattern located within the at least one patterned and cured low-k material, wherein the at least one conductively filled region has an inflection point at a lower region of the interconnect pattern that is in proximity to an upper surface of the substrate and the interconnect region having an upper region that has substantially straight sidewalls.
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