Self-aligned contacts for replacement metal gate transistors
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United States of America Patent
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Jun 16, 2015
Grant Date -
Nov 6, 2014
app pub date -
Jul 22, 2014
filing date -
Mar 8, 2013
priority date (Note) -
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Abstract
Embodiments of the invention include methods of forming gate caps. Embodiments may include providing a semiconductor device including a gate on a semiconductor substrate and a source/drain region on the semiconductor substrate adjacent to the gate, forming a blocking region, a top surface of which extends above a top surface of the gate, depositing an insulating layer above the semiconductor device, and planarizing the insulating layer using the blocking region as a planarization stop. Embodiments further include semiconductor devices having a semiconductor substrate, a gate above the semiconductor substrate, a source/drain region adjacent to the gate, a gate cap above the gate that cover the full width of the gate, and a contact adjacent to the source/drain region having a portion of its sidewall defined by the gate cap.
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