High voltage laterally diffused metal oxide semiconductor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9059276
APP PUB NO 20140346597A1
SERIAL NO

13912781

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Abstract

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High-voltage LDMOS devices with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming an insulator layer of varying depth over a drift region and a body of a substrate. The method further includes forming a control gate and a split gate region by patterning a layer of material on the insulator layer. The split gate region is formed on a first portion of the insulator layer and the control gate is formed on a second portion of the insulator layer, which is thinner than the first portion.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feilchenfeld, Natalie B Jericho, US 34 338
Letavic, Theodore J Colchester, US 20 160
Phelps, Richard A Colchester, US 59 625
Sharma, Santosh Essex Junction, US 76 1324
Shi, Yun South Burlington, US 90 1219
Zierak, Michael J Colchester, US 47 344

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