Multigate metal oxide semiconductor devices and fabrication methods

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United States of America

PATENT NO 9059280
SERIAL NO

13737682

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Abstract

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A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the first well and connected with the gate structure through a first semiconductor fin structure. The raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure. The second semiconductor fin structure includes at least a gap and a lightly doped portion.

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Patent Owner(s)

  • BROADCOM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Akira Irvine, US 450 4189

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