Multigate metal oxide semiconductor devices and fabrication methods
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United States of America
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Jun 16, 2015
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app pub date -
Jan 9, 2013
filing date -
Jan 9, 2013
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Abstract
A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the first well and connected with the gate structure through a first semiconductor fin structure. The raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure. The second semiconductor fin structure includes at least a gap and a lightly doped portion.
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