Dual L-shaped drift regions in an LDMOS device and method of making the same
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jan 15, 2015
app pub date -
Jul 11, 2013
filing date -
Jul 11, 2013
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Abstract
A semiconductor device comprising dual L-shaped drift regions in a lateral diffused metal oxide semiconductor (LDMOS) and a method of making the same. The LDMOS in the semiconductor device comprises a trench isolation region or a deep trench encapsulated by a liner, a first L-shaped drift region, and a second L-shaped drift region. The LDMOS comprising the dual L-shape drift regions is integrated with silicon-germanium (SiGe) technology. The LDMOS comprising the dual L-shape drift regions furnishes a much higher voltage drop in a lateral direction within a much shorter distance from a drain region than the traditional LDMOS does.
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