Overlapped III-V finfet with doped semiconductor extensions
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United States of America Patent
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Jun 16, 2015
Grant Date -
Dec 25, 2014
app pub date -
Jul 5, 2013
filing date -
Jun 21, 2013
priority date (Note) -
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Abstract
A semiconductor structure that includes a semiconductor fin comprising an III-V compound semiconductor material. A functional gate structure straddles a portion of the semiconductor fin. A semiconductor channel material having an electron mobility greater than silicon and comprising a different semiconductor material than the semiconductor fin and is located beneath the functional gate structure. The semiconductor channel material is present on at least each vertical sidewall of the semiconductor fin. A dielectric spacer is located on each vertical sidewall surface of the functional gate structure. A doped semiconductor is located on each side of the functional gate structure and underneath each dielectric spacer. A portion of the doped semiconductor material located beneath each dielectric spacer directly contacts a sidewall surface of semiconductor channel material located on each vertical sidewall of the semiconductor fin.
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