Buried channel field-effect transistors
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United States of America Patent
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Jun 16, 2015
Grant Date -
Nov 14, 2013
app pub date -
May 14, 2012
filing date -
May 14, 2012
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Abstract
Methods for forming a buried-channel field-effect transistor include doping source and drain regions on a substrate with a dopant having a first type; forming a doped shielding layer on the substrate in a channel region having a second doping type opposite the first type to displace a conducting channel away from a gate-interface region; forming a gate dielectric over the doped shielding layer; and forming a gate on the gate dielectric.
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