Self-aligned lower bottom electrode
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jun 7, 2012
app pub date -
Feb 9, 2012
filing date -
Nov 16, 2009
priority date (Note) -
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Abstract
A method of fabricating a lower bottom electrode for a memory element and a semiconductor structure having the same includes forming a dielectric layer over a semiconductor substrate having a plurality of conductive contacts formed therein to be connected to access circuitry, forming a dielectric cap layer over exposed portions of the dielectric layer and the conductive contacts, depositing a planarizing material over the dielectric cap layer, etching a via to an upper surface of each conductive contact, removing the planarizing material, depositing electrode material over the dielectric cap layer and within the vias, the electrode material contacting an upper surface of each conductive contact, and planarizing the electrode material to form a lower bottom electrode over each conductive contact.
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